AMORPHOUS-SILICON BASED RADIATION DETECTORS

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dc.contributor.authorPEREZMENDEZ, Vko
dc.contributor.authorCho, Gyuseongko
dc.contributor.authorDREWERY, Jko
dc.contributor.authorJING, Tko
dc.contributor.authorKAPLAN, SNko
dc.contributor.authorQURESHI, Sko
dc.contributor.authorWILDERMUTH, Dko
dc.contributor.authorFUJIEDA, Iko
dc.contributor.authorSTREET, RAko
dc.date.accessioned2013-02-25T21:56:07Z-
dc.date.available2013-02-25T21:56:07Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1991-12-
dc.identifier.citationJOURNAL OF NON-CRYSTALLINE SOLIDS, v.137, pp.1291 - 1296-
dc.identifier.issn0022-3093-
dc.identifier.urihttp://hdl.handle.net/10203/65595-
dc.description.abstractWe describe the characteristics of thin(1-mu-m) and thick (> 30-mu-m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and gamma-rays. For x-ray, gamma-ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.titleAMORPHOUS-SILICON BASED RADIATION DETECTORS-
dc.typeArticle-
dc.identifier.wosidA1991GX22800159-
dc.identifier.scopusid2-s2.0-0001266402-
dc.type.rimsART-
dc.citation.volume137-
dc.citation.beginningpage1291-
dc.citation.endingpage1296-
dc.citation.publicationnameJOURNAL OF NON-CRYSTALLINE SOLIDS-
dc.identifier.doi10.1016/S0022-3093(05)80360-6-
dc.contributor.localauthorCho, Gyuseong-
dc.contributor.nonIdAuthorPEREZMENDEZ, V-
dc.contributor.nonIdAuthorDREWERY, J-
dc.contributor.nonIdAuthorJING, T-
dc.contributor.nonIdAuthorKAPLAN, SN-
dc.contributor.nonIdAuthorQURESHI, S-
dc.contributor.nonIdAuthorWILDERMUTH, D-
dc.contributor.nonIdAuthorFUJIEDA, I-
dc.contributor.nonIdAuthorSTREET, RA-
dc.type.journalArticleArticle; Proceedings Paper-
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