AMORPHOUS-SILICON BASED RADIATION DETECTORS

We describe the characteristics of thin(1-mu-m) and thick (> 30-mu-m) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and gamma-rays. For x-ray, gamma-ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays.
Publisher
ELSEVIER SCIENCE BV
Issue Date
1991-12
Language
ENG
Citation

JOURNAL OF NON-CRYSTALLINE SOLIDS, v.137, pp.1291 - 1296

ISSN
0022-3093
DOI
10.1016/S0022-3093(05)80360-6
URI
http://hdl.handle.net/10203/65595
Appears in Collection
NE-Journal Papers(저널논문)
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