Growth and Properties of InGaAs/InP and InGaAs/InP Quantum Well Using OMVPE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | J.B. Yoo | ko |
| dc.contributor.author | J.S. Kim | ko |
| dc.contributor.author | D.H. Jang | ko |
| dc.contributor.author | C.Y. Park | ko |
| dc.contributor.author | D.K. Oh | ko |
| dc.contributor.author | Y.T. Lee | ko |
| dc.contributor.author | Lee, JeongYong | ko |
| dc.date.accessioned | 2013-02-25T20:00:44Z | - |
| dc.date.available | 2013-02-25T20:00:44Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1992-12 | - |
| dc.identifier.citation | KOREAN APPLIED PHYSICS, v.5, no.1, pp.61 - 65 | - |
| dc.identifier.issn | 1013-7009 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64866 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Growth and Properties of InGaAs/InP and InGaAs/InP Quantum Well Using OMVPE | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 5 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 61 | - |
| dc.citation.endingpage | 65 | - |
| dc.citation.publicationname | KOREAN APPLIED PHYSICS | - |
| dc.contributor.localauthor | Lee, JeongYong | - |
| dc.contributor.nonIdAuthor | J.B. Yoo | - |
| dc.contributor.nonIdAuthor | J.S. Kim | - |
| dc.contributor.nonIdAuthor | D.H. Jang | - |
| dc.contributor.nonIdAuthor | C.Y. Park | - |
| dc.contributor.nonIdAuthor | D.K. Oh | - |
| dc.contributor.nonIdAuthor | Y.T. Lee | - |
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