TiSi2와 다결정 실리콘에 이온주입된 As계에서 TiAs침전물형성에 관한 고분해능 TEM 연구High-Resolution TEM Study on TiAs Precipitate Formation Between TiSi2 and As Doped in Poly-Silicon
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박형호 | ko |
| dc.contributor.author | 이정용 | ko |
| dc.contributor.author | 조경익 | ko |
| dc.contributor.author | 이중환 | ko |
| dc.contributor.author | 권오준 | ko |
| dc.contributor.author | 남기수 | ko |
| dc.date.accessioned | 2013-02-25T19:59:05Z | - |
| dc.date.available | 2013-02-25T19:59:05Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1991-12 | - |
| dc.identifier.citation | 전자공학회논문지, v.28, no.5, pp.375 - 379 | - |
| dc.identifier.issn | 1975-2377 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64861 | - |
| dc.language | Korean | - |
| dc.publisher | 대한전자공학회 | - |
| dc.title | TiSi2와 다결정 실리콘에 이온주입된 As계에서 TiAs침전물형성에 관한 고분해능 TEM 연구 | - |
| dc.title.alternative | High-Resolution TEM Study on TiAs Precipitate Formation Between TiSi2 and As Doped in Poly-Silicon | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 28 | - |
| dc.citation.issue | 5 | - |
| dc.citation.beginningpage | 375 | - |
| dc.citation.endingpage | 379 | - |
| dc.citation.publicationname | 전자공학회논문지 | - |
| dc.contributor.localauthor | 이정용 | - |
| dc.contributor.nonIdAuthor | 박형호 | - |
| dc.contributor.nonIdAuthor | 조경익 | - |
| dc.contributor.nonIdAuthor | 이중환 | - |
| dc.contributor.nonIdAuthor | 권오준 | - |
| dc.contributor.nonIdAuthor | 남기수 | - |
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