ACTIVATION AND RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS-SILICON FILMS BY RAPID THERMAL ANNEALING
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KIM, YT | ko |
| dc.contributor.author | Yoo, Hyung Joun | ko |
| dc.contributor.author | JUN, CH | ko |
| dc.contributor.author | JANG, WI | ko |
| dc.contributor.author | KIM, SH | ko |
| dc.date.accessioned | 2013-02-25T19:50:43Z | - |
| dc.date.available | 2013-02-25T19:50:43Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1989-05 | - |
| dc.identifier.citation | JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.7, no.3, pp.796 - 801 | - |
| dc.identifier.issn | 0734-2101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/64819 | - |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | ACTIVATION AND RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS-SILICON FILMS BY RAPID THERMAL ANNEALING | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1989U715300045 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 7 | - |
| dc.citation.issue | 3 | - |
| dc.citation.beginningpage | 796 | - |
| dc.citation.endingpage | 801 | - |
| dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS | - |
| dc.identifier.doi | 10.1116/1.575843 | - |
| dc.contributor.localauthor | Yoo, Hyung Joun | - |
| dc.contributor.nonIdAuthor | KIM, YT | - |
| dc.contributor.nonIdAuthor | JUN, CH | - |
| dc.contributor.nonIdAuthor | JANG, WI | - |
| dc.contributor.nonIdAuthor | KIM, SH | - |
| dc.type.journalArticle | Article | - |
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