DC Field | Value | Language |
---|---|---|
dc.contributor.author | CHO, HY | ko |
dc.contributor.author | KIM, EK | ko |
dc.contributor.author | MIN, SK | ko |
dc.contributor.author | Lee, Choochon | ko |
dc.date.accessioned | 2013-02-25T13:28:53Z | - |
dc.date.available | 2013-02-25T13:28:53Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-06 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.43, no.18, pp.14498 - 14503 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/62519 | - |
dc.description.abstract | Several deep-level defects in hydrogen-passivated GaAs doped with Si have been investigated. The defect transformation by atomic hydrogen confirms the assignment of these defects to metastable defects associated with a hydrogen atom. Thermal-annealing experiments under biased and unbiased conditions confirm that during hydrogenation a deep level at 0.60 eV below the conduction band is generated, as a metastable defect for the native deep level at 0.42 eV below the conduction band, and the complete passivation of the 0.42- or the 0.33-eV trap during hydrogenation is due to passivation of the trap by a hydrogen-atom-forming hydrogen-defect complex. The first-order kinetics permits a precise estimate of the formation and annealing frequencies v(f) and v(a) of the hydrogen-defect pair. The temperature-dependent values of v(a) for the 0.60-eV trap satisfy the relation v(a) = (0.82 X 10(13)exp[(-1.61 +/- 0.04 eV)/kT] s-1. We propose that this activation energy could be the value required for the release of a hydrogen atom bound to a point defect in GaAs. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.subject | DEEP-LEVEL DEFECTS | - |
dc.subject | ELECTRON TRAP | - |
dc.subject | DONOR NEUTRALIZATION | - |
dc.subject | PASSIVATION | - |
dc.subject | INP | - |
dc.subject | EL2 | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | IDENTIFICATION | - |
dc.subject | BEHAVIOR | - |
dc.subject | SILICON | - |
dc.title | ROLE OF THE HYDROGEN-ATOM ON METASTABLE DEFECTS IN GAAS | - |
dc.type | Article | - |
dc.identifier.wosid | A1991FW75500018 | - |
dc.type.rims | ART | - |
dc.citation.volume | 43 | - |
dc.citation.issue | 18 | - |
dc.citation.beginningpage | 14498 | - |
dc.citation.endingpage | 14503 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.43.14498 | - |
dc.contributor.nonIdAuthor | CHO, HY | - |
dc.contributor.nonIdAuthor | KIM, EK | - |
dc.contributor.nonIdAuthor | MIN, SK | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | DEEP-LEVEL DEFECTS | - |
dc.subject.keywordPlus | ELECTRON TRAP | - |
dc.subject.keywordPlus | DONOR NEUTRALIZATION | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | INP | - |
dc.subject.keywordPlus | EL2 | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | IDENTIFICATION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | SILICON | - |
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