ROLE OF THE HYDROGEN-ATOM ON METASTABLE DEFECTS IN GAAS

Several deep-level defects in hydrogen-passivated GaAs doped with Si have been investigated. The defect transformation by atomic hydrogen confirms the assignment of these defects to metastable defects associated with a hydrogen atom. Thermal-annealing experiments under biased and unbiased conditions confirm that during hydrogenation a deep level at 0.60 eV below the conduction band is generated, as a metastable defect for the native deep level at 0.42 eV below the conduction band, and the complete passivation of the 0.42- or the 0.33-eV trap during hydrogenation is due to passivation of the trap by a hydrogen-atom-forming hydrogen-defect complex. The first-order kinetics permits a precise estimate of the formation and annealing frequencies v(f) and v(a) of the hydrogen-defect pair. The temperature-dependent values of v(a) for the 0.60-eV trap satisfy the relation v(a) = (0.82 X 10(13)exp[(-1.61 +/- 0.04 eV)/kT] s-1. We propose that this activation energy could be the value required for the release of a hydrogen atom bound to a point defect in GaAs.
Publisher
AMER PHYSICAL SOC
Issue Date
1991-06
Language
ENG
Keywords

DEEP-LEVEL DEFECTS; ELECTRON TRAP; DONOR NEUTRALIZATION; PASSIVATION; INP; EL2; SEMICONDUCTORS; IDENTIFICATION; BEHAVIOR; SILICON

Citation

PHYSICAL REVIEW B, v.43, no.18, pp.14498 - 14503

ISSN
1098-0121
DOI
10.1103/PhysRevB.43.14498
URI
http://hdl.handle.net/10203/62519
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
  • Hit : 141
  • Download : 0
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 7 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0