DETERMINATION OF POSITIVE MOBILE ION DENSITY IN SILICON DIOXIDE BY HYDROGENATED AMORPHOUS-SILICON FIELD-EFFECT TECHNIQUE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | JANG, J | ko |
| dc.contributor.author | LEE, K | ko |
| dc.contributor.author | Lee, Choochon | ko |
| dc.date.accessioned | 2013-02-25T13:13:47Z | - |
| dc.date.available | 2013-02-25T13:13:47Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1982 | - |
| dc.identifier.citation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.129, no.12, pp.2770 - 2772 | - |
| dc.identifier.issn | 0013-4651 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/62432 | - |
| dc.language | English | - |
| dc.publisher | ELECTROCHEMICAL SOC INC | - |
| dc.title | DETERMINATION OF POSITIVE MOBILE ION DENSITY IN SILICON DIOXIDE BY HYDROGENATED AMORPHOUS-SILICON FIELD-EFFECT TECHNIQUE | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1982PT93700026 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 129 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 2770 | - |
| dc.citation.endingpage | 2772 | - |
| dc.citation.publicationname | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
| dc.identifier.doi | 10.1149/1.2123676 | - |
| dc.contributor.nonIdAuthor | JANG, J | - |
| dc.contributor.nonIdAuthor | LEE, K | - |
| dc.type.journalArticle | Article | - |
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