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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08 | |
| A study on low dielectric material deposition using a helicon plasma source Kim, JH; Seo, SH; Yun, SM; Chang, Hong-Young; Lee, KM; Choi, CK, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.143, no.9, pp.2990 - 2995, 1996-09 | |
| Optical properties and carrier dynamics of two-dimensional electrons in AlGaN/GaN single heterostructures Kwack, HS; Cho, Yong-Hoon; Kim, GH; Park, MR; Youn, DH; Bae, SB; Lee, KS; Lee, JH; Kim, TW; Kang, TW; Wang, KL, APPLIED PHYSICS LETTERS, v.87, pp.3751 - 3762, 2005-07 | |
| Structural and photoluminescence studies of highly crystalline un-annealed ZnO nanorods arrays synthesized by hydrothermal technique Gokarna, Anisha; Kim, Je-Hyung; Leroy, Floriane; Patriarche, Gilles; Roussel, Pascal; Bougrioua, Zahia; Rodriguez, Christophe; Dogheche, Elhadj; Cho, Yong-Hoon, JOURNAL OF LUMINESCENCE, v.144, pp.234 - 240, 2013-12 | |
| High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration Cho, Yong-Hoon; Fedler, F; Hauenstein, RJ; Park, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, JOURNAL OF APPLIED PHYSICS, v.85, no.5, pp.3006 - 3008, 1999-03 |
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