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Results 1-6 of 6 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
Impact of Si impurities in HfO2: Threshold voltage problems in poly-Si/HfO2 gate stacks

Kim, DY; Kang, J; Chang, Kee-Jooresearcher, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1628 - 1632, 2006-06

Electronic structure of a magnetic quantum ring

Kim, N; Ihm, G; Sim, Heung-Sunresearcher; Chang, Kee-Jooresearcher, PHYSICAL REVIEW B, v.60, no.12, pp.8767 - 8772, 1999-09

A first-principles study of Mg-related defects in GaN

Chang, Kee-Jooresearcher; Lee, SG, MATERIALS SCIENCE FORUM, v.258-263, pp.1137 - 1141, 1997-12

Magnetic edge states in a magnetic quantum dot

Sim, Heung-Sunresearcher; Ahn, KH; Chang, Kee-Jooresearcher; Ihm, G; Kim, N; Lee, SJ, PHYSICAL REVIEW LETTERS, v.80, no.7, pp.1501 - 1504, 1998-02

Exciton binding energies in GaN/AlGaN quantum-well structures

Chung, TY; Chang, Kee-Jooresearcher, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.13, no.8, pp.876 - 881, 1998-08

Atomic model for the electrical deactivation of N in Si oxynitrides

Lee, EC; Chang, Kee-Jooresearcher, PHYSICA B-CONDENSED MATTER, v.340, pp.974 - 977, 2003-12

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