Solid phase epitaxial growth of GaAs on Si substrates

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dc.contributor.authorCHO, KIko
dc.contributor.authorCHOO, WKko
dc.contributor.authorPark, Sin Chongko
dc.contributor.authorNISHINAGA, Tko
dc.contributor.authorLEE, BTko
dc.date.accessioned2013-02-25T11:42:51Z-
dc.date.available2013-02-25T11:42:51Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1990-01-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.56, no.5, pp.448 - 450-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/61949-
dc.languageEnglish-
dc.publisherAmer Inst Physics-
dc.titleSolid phase epitaxial growth of GaAs on Si substrates-
dc.typeArticle-
dc.identifier.wosidA1990CL02600014-
dc.identifier.scopusid2-s2.0-0040174995-
dc.type.rimsART-
dc.citation.volume56-
dc.citation.issue5-
dc.citation.beginningpage448-
dc.citation.endingpage450-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.102761-
dc.contributor.localauthorPark, Sin Chong-
dc.contributor.nonIdAuthorCHO, KI-
dc.contributor.nonIdAuthorCHOO, WK-
dc.contributor.nonIdAuthorNISHINAGA, T-
dc.contributor.nonIdAuthorLEE, BT-
dc.type.journalArticleArticle-
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