Browse "MS-Journal Papers(저널논문)" by Subject LASERS
Showing results 1 to 21 of 21
| Annealing effects on the microstructural properties of the ZnO thin films grown on p-InP (100) substrates Yuk, Jong Min; Son, DI; Kim, TW; Kim, JY; Choi, WK, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.357 - 360, 2008-07 |
| Atomic arrangement variations of [0001]-tilt grain boundaries in ZnO thin films grown on p-Si substrates due to thermal treatment Shin, JW; Lee, JeongYong; No, YS; Jung, JH; Kim, TW; Choi, WK, APPLIED PHYSICS LETTERS, v.90, no.18, 2007-04 |
| Atomic structural variations of [0 0 0 1]-tilt grain boundaries during ZnO grain growth occurred by thermal treatments Yuk, Jong Min; Lee, Jeong-Yong; Lee, Zong-Hoon; No, Y. S.; Kim, T. W.; Kim, J. Y.; Choi, W. K., APPLIED SURFACE SCIENCE, v.257, no.11, pp.4817 - 4820, 2011-03 |
| Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment Shin, Jae Won; Jeong, Hu Young; Yoo, Seung Jo; Lee, Seok-Hoon; Han, Junhee; Lee, Jeong-Yong; Ahn, Jun Sung; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.11, 2014-11 |
| COMPOSITIONAL DISORDERING IN AL0.3GA0.7AS/GAAS SUPERLATTICES BY THERMAL-TREATMENT KIM, SK; KANG, TW; HONG, CY; KIM, TW; Lee, JeongYong, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, v.143, no.1, pp.23 - 27, 1994-05 |
| Dependence of the InAs size distribution on the growth times for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.41, pp.483 - 486, 2002-10 |
| Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee, HS; Lee, JeongYong; Kim, TW; Choo, DC; Kim, MD; Seo, SY; Shin, JungHoon, JOURNAL OF CRYSTAL GROWTH, v.241, no.1-2, pp.63 - 68, 2002-05 |
| Dependence of the optical properties on the temperatures in multiple-stacked InAs/GaAs quantum dots grown on GaAs (001) substrates Lee, HS; Lee, JeongYong; Kim, TW, JOURNAL OF CRYSTAL GROWTH, v.258, pp.256 - 260, 2003-11 |
| Effects of two-dimensional electron gas on the optical properties of InAs/GaAs quantum dots in modulation-doped heterostructures Kim, TW; Kim, JH; Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.86, pp.353 - 355, 2005-01 |
| Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JeongYong; Jeong, JC, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, pp.154 - 159, 2003-07 |
| Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04 |
| Formation process and lattice parameter of InAs/GaAs quantum dots Kim, MD; Lee, HS; Lee, JeongYong; Kim, TW; Yoo, KH; Kim, GH, JOURNAL OF MATERIALS SCIENCE LETTERS, v.22, pp.1767 - 1770, 2003-12 |
| Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD; Cho, SM; Kwon, YJ; Oh, JE, APPLIED PHYSICS LETTERS, v.88, pp.380 - 388, 2006-06 |
| InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JeongYong, SOLID STATE COMMUNICATIONS, v.101, no.9, pp.705 - 708, 1997-03 |
| Microstructural and interband transition properties of vertically stacked InAs/GaAs self-assembled quantum dots embedded in modulation-doped heterostructures Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD, APPLIED PHYSICS LETTERS, v.79, no.1, pp.33 - 35, 2001-07 |
| Microstructural and interband transition studies of multiple stacked layers of Si-doped InAs self-assembled quantum dot arrays inserted into GaAs barriers Kim, TW; Lee, DU; Choo, DC; Kim, HJ; Lee, HS; Lee, JeongYong; Kim, MD; et al, SOLID STATE COMMUNICATIONS, v.118, no.9, pp.465 - 468, 2001-05 |
| Microstructural properties of closely stacked InAs quantum dots inserted in GaAs layers embedded in modulation-doped Al0.25Ga0.75As/GaAs heterostructures Lee, HS; Lee, JeongYong; Lee, DU; Choo, DC; Kim, TW; Kim, MD, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.40, pp.115 - 118, 2002-01 |
| Pressure dependence and micro-hillock formation of ZnO thin films grown at low temperature by MOCVD Kim, Dong Chan; Kong, Bo Hyun; Jun, Sang Ouk; Cho, Hyung Koun; Park, Dong Jun; Lee, JeongYong, THIN SOLID FILMS, v.516, no.16, pp.5562 - 5566, 2008-06 |
| Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
| Structural and stimulated emission characteristics of diameter-controlled ZnO nanowires using buffer structure Lee, Sang Hyun; Lee, Seogwoo; Ha, Jun-Seok; Lee, Hyo-Jong; Lee, Jae Wook; Lee, JeongYong; Hong, Soon-Ku; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.22, 2009-11 |
| Surface morphology and domain structure during the evolution of ZnO nanorods into films Park, Dong Jun; Lee, JeongYong; Kim, Dong Chan; Cho, Hyung Koun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009-02 |
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