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A Two-Dimensional Model for the Excess Interstitial Distribution in Silicon During Thermal Oxidation

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Y.S.Shin / Kim, Choong Ki
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
1984-06
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.6, pp.797 - 800

ISSN
0018-9383
URI
http://hdl.handle.net/10203/60720
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