LOW-THRESHOLD CURRENT-DENSITY INGAAS SURFACE-EMITTING LASERS WITH PERIODIC GAIN ACTIVE STRUCTURE

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The authors have obtained very low threshold current densities for InGaAs vertical-cavity surface-emitting lasers using a periodic gain active structure. For a 40mum diameter device, the threshold current density for room-temperature CW operation was as low as 380A/cm2 with light output power of more than 11mW.
Publisher
IEE-INST ELEC ENG
Issue Date
1994-06
Language
English
Article Type
Article
Keywords

DIODES

Citation

ELECTRONICS LETTERS, v.30, no.13, pp.1060 - 1061

ISSN
0013-5194
DOI
10.1049/el:19940719
URI
http://hdl.handle.net/10203/60641
Appears in Collection
EE-Journal Papers(저널논문)
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