LOW-THRESHOLD CURRENT-DENSITY INGAAS SURFACE-EMITTING LASERS WITH PERIODIC GAIN ACTIVE STRUCTURE

Abstract

The authors have obtained very low threshold current densities for InGaAs vertical-cavity surface-emitting lasers using a periodic gain active structure. For a 40mum diameter device, the threshold current density for room-temperature CW operation was as low as 380A/cm2 with light output power of more than 11mW.