고속열확산 공정에 의해 형성된 Phosphorus Source/Drain 을 갖는 NMOS 트랜지스터의 특성
- Publisher
- 대한전자공학회
- Issue Date
- 1990-09
- Language
- Korean
- Citation
전자공학회논문지, v.27, no.9, pp.1409 - 1418
- ISSN
- 1975-2377
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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