LEAKAGE MECHANISMS IN THE HEAVILY DOPED GATED DIODE STRUCTURES

A leakage current model is presented which shows very good agreement with reported experimental results on gated diode structures with today's ULSI dimensions. The leakage current is modeled as the Shockley-Read-Hall (SRH) generation current, enhanced by the Poole-Frenkel (P-F) effect and trap-assisted tunneling. The model shows very good agreement on gate voltage, temperature, and oxide thickness dependence for normal operating voltage range. It is found from the model that the doping range from 2 x 10(18) to 1 x 10(19) cm-3 gives the most significant degradation to the leakage characteristics in trench-type DRAM cells and the drain of MOSFET's.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1991-02
Language
ENG
Keywords

JUNCTIONS; FIELD

Citation

IEEE ELECTRON DEVICE LETTERS, v.12, no.2, pp.74 - 76

ISSN
0741-3106
URI
http://hdl.handle.net/10203/60031
Appears in Collection
RIMS Journal Papers
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