Plasma-Enhanced Chemical Vapor Deposition of Low-Resistive Tungsten Thin Films

Controlling the wafer temperatures from 200 to 500-degrees-C at H-2/WF6 flow ratio equal to 24, low-resistive (about 11-mu-OMEGA-cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.
Publisher
Amer Inst Physics
Issue Date
1991-02
Language
ENG
Citation

APPLIED PHYSICS LETTERS, v.58, no.8, pp.837 - 839

ISSN
0003-6951
DOI
10.1063/1.104505
URI
http://hdl.handle.net/10203/59565
Appears in Collection
EE-Journal Papers(저널논문)
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