Measurement of picosecond electrical signals using a photoconductive step-function gate is demonstrated analytically and experimentally. The time resolution of our step-function technique is limited only by the rise time of the step-function, which is approximately the same as the laser pulse width. Also, a regular, unhoped semiconductor material, which is essential for the realization of a short-duration gate, can be used instead of the highly defected material. The use of unhoped material gives 10 to 100 times higher sensitivity in the measurement than the impulse-function technique because of the high mobility of the unhoped material.