INVESTIGATION OF INITIAL FORMATION OF ALUMINUM NITRIDE FILMS BY SINGLE PRECURSOR ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION OF [ME2AL(MU]NHR)]2 (R=IPR, TBU)

Abstract

The organometallic chemical vapor deposition of single precursors, [Me2Al(mu-NHR)]2 (R=(i)Pr, (t)Bu), for aluminum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that (t)Bu group is better than (i)Pr group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.