Effects of High-Current Pulses on Polycrystalline Silicon Diode with n-type Region Heavily Doped with both Boron and Phosphorus
- Publisher
- Amer Inst Physics
- Issue Date
- 1982-07
- Language
- English
- Article Type
- Note
- Citation
JOURNAL OF APPLIED PHYSICS, v.53, no.7, pp.5359 - 5360
- ISSN
- 0021-8979
- Appears in Collection
- Files in This Item
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