Effects of SiH4 on Resistivity of Plasma Enhanced Chemical Vapor Deposition Tungsten Thin Films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Y.T.Kim | ko |
| dc.contributor.author | S.K.Min | ko |
| dc.contributor.author | S.S.Yom | ko |
| dc.contributor.author | J.S.Hong | ko |
| dc.contributor.author | C.Y.Hong | ko |
| dc.contributor.author | C.K.Kim | ko |
| dc.date.accessioned | 2013-02-25T00:37:59Z | - |
| dc.date.available | 2013-02-25T00:37:59Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1990-12 | - |
| dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.23, no.6, pp.518 - 522 | - |
| dc.identifier.issn | 3744-4884 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/58458 | - |
| dc.language | Korean | - |
| dc.publisher | 한국물리학회 | - |
| dc.title | Effects of SiH4 on Resistivity of Plasma Enhanced Chemical Vapor Deposition Tungsten Thin Films | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 23 | - |
| dc.citation.issue | 6 | - |
| dc.citation.beginningpage | 518 | - |
| dc.citation.endingpage | 522 | - |
| dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
| dc.contributor.nonIdAuthor | Y.T.Kim | - |
| dc.contributor.nonIdAuthor | S.K.Min | - |
| dc.contributor.nonIdAuthor | S.S.Yom | - |
| dc.contributor.nonIdAuthor | J.S.Hong | - |
| dc.contributor.nonIdAuthor | C.Y.Hong | - |
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