Oxygen and Nitrogen Impurity Effects on Electrical and Optical Properties of a-Si:H

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dc.contributor.authorH.K. Leeko
dc.contributor.author이주천ko
dc.date.accessioned2013-02-24T14:47:00Z-
dc.date.available2013-02-24T14:47:00Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1984-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.17, no.3, pp.234 - 241-
dc.identifier.issn3744-4884-
dc.identifier.urihttp://hdl.handle.net/10203/57981-
dc.languageEnglish-
dc.publisher한국물리학회-
dc.titleOxygen and Nitrogen Impurity Effects on Electrical and Optical Properties of a-Si:H-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume17-
dc.citation.issue3-
dc.citation.beginningpage234-
dc.citation.endingpage241-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.nonIdAuthorH.K. Lee-
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