INTERMODULATION DISTORTION IN A MULTIPLE-QUANTUM-WELL SEMICONDUCTOR OPTICAL AMPLIFIER

We report the measurement of intermodulation distortion (IMD) induced by carrier-density modulation in a multiple-quantum-well semiconductor amplifier. The results show that multiple-quantum-well amplifiers have 15 dB less IMD than conventional buried heterostructure semiconductor amplifiers. Also, the frequency response of the IMD shows a dependence arising from two distinct carrier lifetimes, 200-250 ps and < 10 ps.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1991-02
Language
ENG
Keywords

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Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.3, no.2, pp.130 - 132

ISSN
1041-1135
DOI
10.1109/68.76864
URI
http://hdl.handle.net/10203/57767
Appears in Collection
EE-Journal Papers(저널논문)
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