A UNIFIED CURRENT VOLTAGE MODEL FOR LONG-CHANNEL NMOSFETS

A new unified current-voltage model is developed for long-channel nMOSFET. This new model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si/SiO2 interface on (100) surface. Combining UCCM with newly proposed universal mobility model at room temperature, we develop a new continuous I-V model which shows excellent agreement with the experimental data for the entire operating regions of gate, drain, and substrate bias voltages.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
1991-02
Language
ENG
Keywords

INVERSION LAYERS; MOSFET; MOBILITY; DESIGN

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.38, no.2, pp.399 - 406

ISSN
0018-9383
URI
http://hdl.handle.net/10203/57647
Appears in Collection
EE-Journal Papers(저널논문)
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