THE INFLUENCES OF TRAPS ON THE GENERATION-RECOMBINATION CURRENT IN SILICON DIODES

Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
1980
Language
ENG
Citation

SOLID-STATE ELECTRONICS, v.23, no.6, pp.655 - 660

ISSN
0038-1101
DOI
10.1016/0038-1101(80)90051-9
URI
http://hdl.handle.net/10203/57605
Appears in Collection
EE-Journal Papers(저널논문)
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