A Self-Consistent Analytic Threshold Voltage Model for Thin SOI n-channel MOSFETs

An accurate analytical threshold voltage model is presented for fully-depleted SOI n-channel MOSFETs having a metal-insulator-semiconductor-insulator-metal structure. The threshold voltage is defined as the gate voltage at which the second derivative of the inversion charge with respect to the gate voltage is maximum. Since the inversion charge is proportional to the drain current at low bias, the model is self-consistent with the measurement scheme when the threshold voltage is measured as the gate voltage at which the variation of the transconductance at low drain bias is maximum. Numerical simulations show good agreement with the model with less than 3% error.
Publisher
Pergamon-Elsevier Science Ltd
Issue Date
1991-12
Language
ENG
Keywords

TRANSISTORS; FILM

Citation

SOLID-STATE ELECTRONICS, v.34, no.12, pp.1421 - 1425

ISSN
0038-1101
DOI
10.1016/0038-1101(91)90039-2
URI
http://hdl.handle.net/10203/57279
Appears in Collection
EE-Journal Papers(저널논문)
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