공정 변수에 따른 PECVD 질화규소 박막 특성에 관한 연구 The effect of process parameters on the properties of PECVD silicon nitride film

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PECVD silicon nitride film was deposited on P-type (100) silicon wafer in a parallel plate type reactor. The effect of different process parameters such as substrate temperature, RF power, and feed gas composition on the properties of silicon nitride layer was studied. Hydrogen content of nitride film was strongly influenced by substrate temperature and decreased with increasing substrate temperature. RF power influenced the type of bond configuration in the film. Si-H bond was dominant at the RF power lower than 40 W, while N-H bond became dominant at the RF power higher than 40 W. Etch rate in buffered HF solution was increased with the increment of hydrogen content in the film. The films deposited in N₂ diluent showed hydrogen content and etch rate higher than those deposited in H₂ diluent. Interface charge density decreased as the flow rate of ammonia increased.
Publisher
한국화학공학회
Issue Date
1991-01
Language
Korean
Citation

KOREAN CHEMICAL ENGINEERING RESEARCH(HWAHAK KONGHAK), v.29, no.3, pp.336 - 344

ISSN
0304-128X
URI
http://hdl.handle.net/10203/56357
Appears in Collection
CBE-Journal Papers(저널논문)
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