TEMPERATURE PROFILE OF A SILICON-ON-INSULATOR MULTILAYER STRUCTURE IN SILICON RECRYSTALLIZATION WITH INCOHERENT-LIGHT SOURCE
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kyung, Chong-Min | ko |
| dc.date.accessioned | 2013-02-24T09:44:24Z | - |
| dc.date.available | 2013-02-24T09:44:24Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1984-12 | - |
| dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.12, pp.1845 - 1851 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/56171 | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | TEMPERATURE PROFILE OF A SILICON-ON-INSULATOR MULTILAYER STRUCTURE IN SILICON RECRYSTALLIZATION WITH INCOHERENT-LIGHT SOURCE | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1984TV47100029 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 31 | - |
| dc.citation.issue | 12 | - |
| dc.citation.beginningpage | 1845 | - |
| dc.citation.endingpage | 1851 | - |
| dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.contributor.localauthor | Kyung, Chong-Min | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
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