TEMPERATURE PROFILE OF A SILICON-ON-INSULATOR MULTILAYER STRUCTURE IN SILICON RECRYSTALLIZATION WITH INCOHERENT-LIGHT SOURCE
- Issue Date
- 1984-12
- Language
- English
- Article Type
- Article
- Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.31, no.12, pp.1845 - 1851
- ISSN
- 0018-9383
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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