NEGATIVE DIFFERENTIAL RESISTANCE OF GAAS/ALXGA1-XAS MULTIQUANTUM WELL STRUCTURES UNDER HIGH-POWER PHOTOEXCITATION - STRUCTURE OPTIMIZATION FOR AN OSCILLATOR

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A study is presented of the photocurrent behaviour of pin diodes having GaAs/AlxGa1-xAs MQW absorption regions for varying incident power, incident wavelength and barrier height, given by the Al fraction x. Optimum results for applications in high power oscillators are expected to be obtained for 0.1 < x < 0.2. The performance characteristics of optically controlled oscillators are estimated for a diode with MQW having Al0.15Ga0.85As barriers.
Publisher
IEE-INST ELEC ENG
Issue Date
1992-05
Language
English
Article Type
Article
Keywords

QUANTUM; MODULATION; DEVICE

Citation

ELECTRONICS LETTERS, v.28, no.10, pp.915 - 916

ISSN
0013-5194
DOI
10.1049/el:19920580
URI
http://hdl.handle.net/10203/55849
Appears in Collection
EE-Journal Papers(저널논문)
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