Low noise amplifiers in SiGe hetero-junction bipolar process using reduced pressure chemical vapor deposition

Publisher
European Gallium Arsenide and other Compound Semiconductors Application Symposium
Issue Date
2003-10
Language
ENG
Citation

European Gallium Arsenide and other Compound Semiconductors Application Symposium, pp.6 - 10

URI
http://hdl.handle.net/10203/5334
Appears in Collection
EE-Conference Papers(학술회의논문)
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