Atomic force microscope 를 이용한 $Ge_2Sb_2Te_5$ 박막의 상변화 거동 및 전기적 특성평가The estimation of the phase change behavior and electrical property of $Ge_2Sb_2Te_5$ thin films using atomic force microscope
- Advisors
- 최시경researcher; Choi, Si-Kyungresearcher
- Description
- 한국과학기술원 : 신소재공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2005
- Identifier
- 249539/325007 / 020043187
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 신소재공학과, 2005, [ vii, 50 p. ]
- Keywords
상변화 메모리; 정보저장 장치; 원자현미경; Atomic force microscope(AFM); PRAM; phase change memory; data storage
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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