RTP를 이용하여 열처리한 polycide 구조에서 tungsten silicide 의 전기적 특성Electrical properties of tungsten silicide in polycide structure annealed by RTP method
- Advisors
- 임호빈researcher; Im, Ho-Binresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1990
- Identifier
- 67538/325007 / 000881140
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 1990.2, [ iii, 54 p. ]
- Keywords
Capacitance-voltage measurements
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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