Polycide 구조로 저압화학증착된 $WSi_x$ 박막의 열처리에 따른 거동Effects of annealing on the properties of $Si_3N_4$ films in polycide structrue formed by LPCVD method

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dc.contributor.advisor임호빈-
dc.contributor.advisorIm, Ho-Bin-
dc.contributor.author이재호-
dc.contributor.authorLee, Jae-Ho-
dc.date.accessioned2011-12-15T01:39:08Z-
dc.date.available2011-12-15T01:39:08Z-
dc.date.issued1989-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=67012&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/51159-
dc.description학위논문(석사) - 한국과학기술원 : 재료공학과, 1989.2, [ [iii], 49 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.subjectLow-pressure chemical vapor deposition.-
dc.titlePolycide 구조로 저압화학증착된 $WSi_x$ 박막의 열처리에 따른 거동-
dc.title.alternativeEffects of annealing on the properties of $Si_3N_4$ films in polycide structrue formed by LPCVD method-
dc.typeThesis(Master)-
dc.identifier.CNRN67012/325007-
dc.description.department한국과학기술원 : 재료공학과, -
dc.identifier.uid000871325-
dc.contributor.localauthor임호빈-
dc.contributor.localauthorIm, Ho-Bin-
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MS-Theses_Master(석사논문)
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