고온열처리가 측면고상결정화시킨 다결정 Si 박막의 미세구조와 박막트랜지스터 특성에 미치는 영향 연구 = Effect of high-temperature annealing on the microstructure of polycrystalline Si films crystallized by lateral growth and its effect on TFT characteriscs

Advisors
안병태researcherAhn, Byung-Taeresearcher
Publisher
한국과학기술원
Issue Date
2003
Identifier
180293/325007 / 020013400
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 재료공학과, 2003.2, [ iii, 78 p. ]

Keywords

박막트랜지스터; 측면고상결정화; metal induced lateral crystallization; high-temperature annealing; poly-Si TFT

URI
http://hdl.handle.net/10203/50928
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=180293&flag=t
Appears in Collection
MS-Theses_Master(석사논문)
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