고온열처리가 측면고상결정화시킨 다결정 Si 박막의 미세구조와 박막트랜지스터 특성에 미치는 영향 연구Effect of high-temperature annealing on the microstructure of polycrystalline Si films crystallized by lateral growth and its effect on TFT characteriscs
- Advisors
- 안병태researcher; Ahn, Byung-Taeresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2003
- Identifier
- 180293/325007 / 020013400
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 2003.2, [ iii, 78 p. ]
- Keywords
박막트랜지스터; 측면고상결정화; metal induced lateral crystallization; high-temperature annealing; poly-Si TFT
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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