에피텍셜 $CoSi_2$층의 (100)Si 기판에서의 성장속도론 및 산화속도론Growth kinetics and oxidation kinetics of epitaxial $CoSi_2$ layer on (100)Si substrate
- Advisors
- 안병태researcher; Ahn, Byung-Taeresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 2000
- Identifier
- 158591/325007 / 000983096
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 2000.2, [ ii, 72 p. ]
- Keywords
코발트실리사이드; 에피텍셜; 산화속도론; 성장속도론; Growth; Epitaxial; Kinetics; Oxidation
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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