1-T형 비휘발성 메모리의 강유전체와 반도체와의 상호 연계에 대한 연구 = A study on the interplays between ferroelectric and semiconductor materials in 1-T type nonvolatile memory device

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Advisors
전덕영researcherJeon, Duk-Youngresearcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
1997
Identifier
113167/325007 / 000957011
Language
kor
Description

학위논문(석사) - 한국과학기술원 : 재료공학과, 1997.2, [ vi, 65, xxix p. ]

Keywords

항전압; 메모리 윈도우; 분극; 강유전체; 메모리 소자; 이력 곡선; Hysteresis loop; Coercive voltage; Memory window; Polarization; Ferroelectric; Memory device

URI
http://hdl.handle.net/10203/50653
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=113167&flag=dissertation
Appears in Collection
MS-Theses_Master(석사논문)
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