급속열산화법을 이용한 게이트용 산화막 성장기구에 관한 연구Kinetics of rapid thermal oxidation of silicon
- Advisors
- 강상원researcher; Kang, Sang-Wonresearcher
- Description
- 한국과학기술원 : 재료공학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1996
- Identifier
- 106615/325007 / 000943304
- Language
- kor
- Description
학위논문(석사) - 한국과학기술원 : 재료공학과, 1996.2, [ 51 p. ]
- Keywords
급속열산화; 성장기구; 산화; Oxidation; RTO; Kinetics
- Appears in Collection
- MS-Theses_Master(석사논문)
- Files in This Item
- There are no files associated with this item.
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