Fabrication and characterization of field emission display having a doped hydrogenated amorphous silicon as a resistive layer = 도핑된 수소화 비정질 실리콘을 저항층으로 갖는 전계방출디스플레이의 제조 및 특성평가

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Since the proposal of the Mo-tip field emitter array by Spindt, LETI has improved the field emitter array (FEA) as an electron source through the addition of a resistive ballast layer, which led to a robust technology that could be taken out of the research laboratory and applied in production. The use of series resistors integrated with the emitter arrays is a straightforward way to limit the emission from an emitter in the array and therefore improve emission uniformity over the array for display. Even though the improvement in the aspect of the pixel is undeniable in the vertical resistive layer structure, the entire activation potential could be applied across the thin resistive layer in the case of a short between the tip and the gate. The resulting electric field sometimes destroys the layer, producing clear shorts. Following the development of the simple vertical resistive layer structure, a lateral resistive layer structure with a meshed cathode was proposed to take advantage of the lateral resistor, which would be superior to the vertical resistor in its ability to withstand electrical and thermal breakdown. However, in the mesh structure, the number of emitters is limited within the mesh if we are to put a group of tips onto a meshed area as well as provide uniform resistance for all the emitters. Thus, a resistive layer structure having a robust lateral resistor for each individual tip, not for a group of tips, is preferred to maximize the tip packing density. A novel resistive layer structure for a Mo-tip field emitter array (FEA) was fabricated and characterized. In this structure, the electrons travel along a resistive path running from a cathode electrode to a tip through the nearest-neighbor via holes of an insulating inter-dielectric film. An individual tip has its own lateral resistor of an identical path length in new resistive layer structure, contrast to the mesh structure and island structure where a group of tips is positioned in a mesh. ...
Advisors
Kim, Ho-Giresearcher김호기researcher
Description
한국과학기술원 : 재료공학과,
Publisher
한국과학기술원
Issue Date
2002
Identifier
174574/325007 / 000975410
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 재료공학과, 2002.2, [ ix, 128 p. ]

Keywords

field emitter array; FED; field emission display; hydrogenated amorphous silicon; 저항층; 수소화 비정질 실리콘; 필드 에미터; 전계방출디스플레이; resistive layer

URI
http://hdl.handle.net/10203/50235
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=174574&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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