Hot-Wire CVD 방법을 이용한 (100) Si과 다결정 Si 씨앗층에서의 저온 에피택셜 Si 성장에 관한 연구 = low-temperature growth of epitaxial Si on (100) Si and poly-Si seed layer using hot-wire CVD

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Advisors
안병태researcherAhn, Byung-Taeresearcher
Description
한국과학기술원 : 신소재공학과,
Publisher
한국과학기술원
Issue Date
2008
Identifier
303610/325007  / 020045196
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 신소재공학과, 2008. 8., [ x, 171 p. ]

Keywords

열선화학기상증착법; 에피택셜 실리콘; 저온 에피택셜 성장; 다결정 실리콘 씨앗층; 박막트랜지스터; hot wire CVD; epitaxial Si; low-temperature epitaxial growth; poly-Si seed layer; thin film transistor

URI
http://hdl.handle.net/10203/49855
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=303610&flag=dissertation
Appears in Collection
MS-Theses_Ph.D.(박사논문)
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