(A) study on alpha particle spectroscopy with a-Si:H pin diode = 비정질 실리콘 pin 다이오드를 이용한 알파선 분광에 관한 연구

The hydrogenated amorphous silicon (a-Si:H) holds good promise for radiation detection from its inherent merits over crystalline counterpart. For the application to alpha spectroscopy, the induced charge collection in a-Si:H pin detector diodes was simulated based on a relevant non-uniform charge generation model. From the simulation, the diode requires an intrinsic layer of thickness $\sim$ 10 micrometers of larger. Also the input equivalent noise charge (ENC) as well as the reverse current for the sample diodes was measured and analyzed into three sources; shot noise, flicker or 1/f noise, and thermal noise from the contact resistance. By comparing the measured ENC with the calculated signal charge, the signal-to-noise ratio (S/N) for the sample diodes was estimated as a function of operational parameters; the applied reverse bias and the shaping time of Gaussian-pulse shaper. The analysis of signal and noise is useful for the optimum design of a-Si:H pin diodes for various charged particle radiation spectroscopy.
Advisors
Cho, Gyu-Seongresearcher조규성researcher
Publisher
한국과학기술원
Issue Date
1996
Identifier
105546/325007 / 000943157
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 원자력공학과, 1996.2, [ v, 41 p. ]

Keywords

Non-uniform Charge Generation Model; a-Si:H pin Diode; Charge Collection Efficiency; 전하수집효율; 전하분포 모델링; 비정질 실리콘; ENC

URI
http://hdl.handle.net/10203/49348
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=105546&flag=t
Appears in Collection
NE-Theses_Master(석사논문)
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