기상 Epitaxy 에 의한 GaAs와 $GaAs_{1-x}P_x$ 결정성장 및 특성조사Characterization of GaAs and $GaAs_{1-x}P_x$ grown by hydride vapor phase epitaxy

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dc.contributor.advisor이주천-
dc.contributor.advisorLee, Choo-Chon-
dc.contributor.author조훈영-
dc.contributor.authorCho, Hun-Young-
dc.date.accessioned2011-12-14T07:49:07Z-
dc.date.available2011-12-14T07:49:07Z-
dc.date.issued1985-
dc.identifier.urihttp://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=64471&flag=dissertation-
dc.identifier.urihttp://hdl.handle.net/10203/48111-
dc.description학위논문(석사) - 한국과학기술원 : 물리학과, 1985.2, [ [iii], 64 p. ]-
dc.languagekor-
dc.publisher한국과학기술원-
dc.title기상 Epitaxy 에 의한 GaAs와 $GaAs_{1-x}P_x$ 결정성장 및 특성조사-
dc.title.alternativeCharacterization of GaAs and $GaAs_{1-x}P_x$ grown by hydride vapor phase epitaxy-
dc.typeThesis(Master)-
dc.identifier.CNRN64471/325007-
dc.description.department한국과학기술원 : 물리학과, -
dc.identifier.uid000831644-
dc.contributor.localauthor조훈영-
dc.contributor.localauthorCho, Hun-Young-
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PH-Theses_Master(석사논문)
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