Characterizations of GaAs/AlAs superlattices and delta-doped epi-layers grown by MOCVDMOCVD 로 성장한 GaAs/AlGaAs 초격자 및 delta doping 한 에피층의 특성연구

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 634
  • Download : 0
The characterizations of superlattices and delta-doped epi-layers grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) have been investigated. As an basic study, the electrical properties of n-$Al_xGa_{1-x}AS$ ($00.2$) due to deep DX center have been investigated. The anomalous conduction band density of states which can be found in the course of the anayses of the Hall-effect measurement results, has been confirmed. Moreover, the physical origin for this anomaly was also discussed. On the basis of this basic study, the growth technology of GaAs/AlGaAs superlattices and modulation doped heterostroctures has been studied. By the proper undestandings of flow patern during growth and design parameters of a reactor, it was proven using photoluminescence, double crystal x-ray diffraction, Hall-effect, C-V profiling and quantum-Hall effect measurements, that the successful growth of these novel structures was possible by MOCVD. The growth technology has been extended to the study of delta-doping which is arised as a novel doping technique and is mainly done by MBE. Although the growth temperatures for delta-doped layer by MOCVD is as higher as $150\,^\circ\!C$ than those of MBE, it was found utlizing C-V profiling, Hall-effect and Shubnikov de Haas (SdH) measurements, that the excellent delta-doping profiles were resulted. This excellent result implies and additional diffusion limiting mechanism which is absent in MBE growth. One possible model for this mechanism is suggested. In addition, a perliminary delta-FET has been fabricated to see the feasibliity of the application. The GaAs-on-Si technology which has been drawn much attentions due to its commercial utility has been studied. To reduce the dislocation density, i...
Advisors
Lee, Choo-Chon이주천
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
1991
Identifier
61631/325007 / 000835079
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 1991.2, [ vii, 153, 6 p. ]

URI
http://hdl.handle.net/10203/47811
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=61631&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0