도핑이 많이 된 n형 GaAs와 InGaP의 광학적 특성에 관한 연구Study on optical properties of heavily n-doped GaAs and InGaP
- Advisors
- 박해용researcher; Park, Hae-Yongresearcher
- Description
- 한국과학기술원 : 물리학과,
- Publisher
- 한국과학기술원
- Issue Date
- 1996
- Identifier
- 108894/325007 / 000925241
- Language
- kor
- Description
학위논문(박사) - 한국과학기술원 : 물리학과, 1996.8, [ iii, 109 p. ]
- Keywords
Heavy doping effect; Photoreflectance; Photoluminescence; InGaP; GaAs
- Appears in Collection
- PH-Theses_Ph.D.(박사논문)
- Files in This Item
- There are no files associated with this item.
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