(A) study on the $Er^{3+}$ excitation mechanism using Er-doped $Si/SiO_2$ superlattice = Er이 첨가된 실리콘/실리카 초격자 구조를 이용한 $Er^{3+}$ 이온의 여기원리에 관한 연구

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The $Er^{3+}$ excitation mechanism was investigated using Er-doped $Si/SiO_2$ or $SiO_x/SiO_2$ superlattice (SL) structure. The Er-doped SL films were deposited by the two-target alternation UHV-ion beam sputtering method (IBSD). The carrier-Er interaction properties was determined using α-$Si/SiO_2$ SL films whose Er-doped $SiO_2$ layer thickness was controlled with sub-nm resolution. The dependence of $Er^{3+}$ photoluminescence intensity on the thickness of the Er-doped $SiO_2$ layer was well-described by carrier-Er interaction that decreases exponentially with a characteristic carrier-$Er^{3+}$ interaction distance to be 0.5±0.1 nm, indicating the likelyhood of an exchange interaction between carriers and $Er^{3+}$ ions. The effects of crystallinity on the $Er^{3+}$ excitation properties were investigated using Er-doped $SiO_x/SiO_2$ SL structure. The stoichiometries of $SiO_x$ layers of SL films were obtained by controlling oxygen partial pressure such that one SL film had $SiO_x$ layers with x=1.6 and the other with x=1.8. Deposited SL films were subsequently annealed at different temperatures up to 1100℃. The formations of well-ordered Si nanocrystals with size of 3-4 nm in film with x=1.6 and size of less than 2 nm in film with x=1.8 were observed after annealing at temperature of higher than 1050℃. The effective excitation cross sections for $Er^{3+}$ excitation were determined experimentally by measuring the rise traces of luminescence at 1.54 ㎛ as a function of excitation power. Based on the comparison both of the measured cross sections and Si contents between films, we conclude that the $Er^{3+}$ excitation is strongly related to the size of nc-Si and thus nc-Si with size of less than 2 nm are more important for achieving the efficient $Er^{3+}$ excitation than both α-Si clusters or nc-Si with size of larger than 2 nm.
Advisors
Shin, Jung-H.researcher신중훈researcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
2004
Identifier
240476/325007  / 000995828
Language
eng
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 2004.8, [ vi, 70 p.]

Keywords

ER-DOPED SI/SIO2 SUPERLATTICE; ER; SI NANOCRYSTALATION; 실리콘 나노결정 레이저; 어븀이 첨가된 실리콘/실리카 초격자; 어븀; SMBCONDUCTOR LASER

URI
http://hdl.handle.net/10203/47346
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=240476&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
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