분광타원계측에 의한 나노미터 두께 게이트 산화막의 광특성 측정 연구 = Measurement of optical properties of nanometer-thick gate oxide films by spectroscopic ellipsometry

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Advisors
김병윤researcherKim, Byoung-Yoonresearcher
Description
한국과학기술원 : 물리학과,
Publisher
한국과학기술원
Issue Date
2001
Identifier
169564/325007 / 000925368
Language
kor
Description

학위논문(박사) - 한국과학기술원 : 물리학과, 2001.8, [ ix, 102 p. ]

Keywords

광학상수; 이산화규소 박막; 게이트 산화막; 타원계측; Sellmeier 함수; Sellmeier function; optical constants; silicon dioxide film; gate oxide; ellipsometry

URI
http://hdl.handle.net/10203/47275
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=169564&flag=dissertation
Appears in Collection
PH-Theses_Ph.D.(박사논문)
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