A study on doping density in InAs/GaAs quantum dot infrared photodetector

We study the influence of doping density and the resulting optimum operation voltage on the performance of quantum dot infrared photodetectors (QDIPs). The optimum operation voltage, where detectivity becomes maximum, becomes smaller as the doping density increases. This is because the optimum dark current levels are similar regardless of the doping density. We confirmed experimentally that the optimum dark current level is similar to5 mA (current density: similar toA/cm(2)) for our samples. It is found that the higher doping density improves the performance in the range used in this experiment (5 x 10(16)-5 x 10(17)/cm(3)). The response to a normal incident light is confirmed and the possibility of high-temperature operation of QDIP is shown.
Publisher
Japan Soc Applied Physics
Issue Date
2004-08
Language
ENG
Keywords

PHOTOCONDUCTIVE GAIN; TEMPERATURE; LAYERS; NOISE

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.8A, pp.5199 - 5203

ISSN
0021-4922
DOI
10.1143/JJAP.43.5199
URI
http://hdl.handle.net/10203/4615
Appears in Collection
EE-Journal Papers(저널논문)
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