Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a (110) bulk silicon wafer

A new method of fabricating atomic force microscope (AFM) probe tip is presented. In this process, the probe tips were implemented using self-aligned heavily boron-doped silicon cantilevers in a [110] bulk silicon wafer. In this structure, a stress-fi ee cantilever can be easily defined by selective etch stop by the heavily boron-doped region in an anisotropic silicon etchant. The proposed tips do not require expensive silicon on insulator (SOI) wafers and double-side alignment. The probe tip dimensions can be exactly defined regardless of wafer thickness by the self-aligned etch from the front side. In addition: the cantilever thickness can be easily controlled by adjusting the diffusion time, and fabricated at low cost by using bulk silicon wafers. The fabricated probe tips showed resonant frequencies of 71.420 kHz with a 1.8-mum-thick probe tip and 122.660 kHz with a 3.0-mum-thick probe tip. Using the two fabricated probe tips, we successfully demonstrate image scanning of a 1 mum grating reference sample in contact and noncontact modes, respectively.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2000-12
Language
ENG
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.39, no.12B, pp.7103 - 7107

ISSN
0021-4922
URI
http://hdl.handle.net/10203/4612
Appears in Collection
EE-Journal Papers(저널논문)
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