Photodetector with Embedded Semiconductor-Metal-Semiconductor Structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chung, Ki-Woong | ko |
| dc.contributor.author | Kwon, Young Se | ko |
| dc.date.accessioned | 2008-05-13T09:07:53Z | - |
| dc.date.available | 2008-05-13T09:07:53Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988-11 | - |
| dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.27, no.11, pp.2186 - 2188 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/4535 | - |
| dc.description.abstract | Two types of photodetectors with embedded semiconductor-metal-semiconductor (SMS) structures are proposed. One of them is the embedded metal-semiconductor-metal photodetector (MSM-PD) which has two interdigitating Schottky electrodes in the semiconductor. This has a larger light-sensitive area than the conventional MSM-PD. The other is the back-gated photoconductive detector (BPCD) which has a reduced fall time. The fall time can be reduced by dragging out the slowly moving hole through the back-gate. | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | Japan Soc Applied Physics | - |
| dc.title | Photodetector with Embedded Semiconductor-Metal-Semiconductor Structure | - |
| dc.type | Article | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 27 | - |
| dc.citation.issue | 11 | - |
| dc.citation.beginningpage | 2186 | - |
| dc.citation.endingpage | 2188 | - |
| dc.citation.publicationname | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
| dc.contributor.nonIdAuthor | Chung, Ki-Woong | - |
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