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Results 1-5 of 5 (Search time: 0.002 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02

2
PVD HfO2 for high-precision MIM capacitor applications

Kim SJ; Cho, Byung Jinresearcher; Li MF; Yu XF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.6, pp.387 - 389, 2003-06

3
MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jinresearcher; Kwong, DL; Foo, PD; Yu, MB; Liu, XY; Winkler, J, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

4
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jinresearcher; Chan, DSH; Rustagi, SC; Yu, MB; Chin, A; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12

5
Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors

Kim SJ; Cho, Byung Jinresearcher; Li MF; Zhu CX; Chin A; Kwong DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.7, pp.442 - 444, 2003-07

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